The upcoming 65th annual IEEE International Electron Devices Meeting (IEDM), to be held December 7-11, 2019 at the Hilton San Francisco Union Square hotel, will once again feature the latest and most important research taking place in semiconductors and other electron devices, but with a sharper focus this year on devices intended to support diverse new applications.
Under the theme “Innovative Devices for an Era of Connected Intelligence,” IEDM 2019 will turn a brighter spotlight on the processors, memories, 3D architectures, power devices, quantum computing concepts and other technologies needed for new applications. These applications include artificial intelligence, mmWave/5G communications, automotive electronics, Internet of Things infrastructure and systems, and others. Talks on these topics will complement presentations describing breakthroughs in CMOS scaling, which remains an area of major importance in the semiconductor industry.
At IEDM each year, the world’s best scientists and engineers in the field of microelectronics gather to participate in a technical program consisting of more than 220 presentations, along with a variety of panels, focus sessions, tutorials, Short Courses, a supplier exhibit, IEEE/EDS award presentations and other events highlighting leading work in more areas of the field than any other conference.
This year IEDM once again will feature special Focus Sessions of invited papers on some of today’s most important areas of research.[1]This year’s Focus Session topics are AI technologies; the human-machine interface; quantum computing infrastructure; and reliability for circuits and systems.
“IEDM 2019 will feature state-of-the-art results from major semiconductor companies, universities and other research institutions around the globe, continuing the conference’s tradition of being the premier venue for the presentation of the highest quality research,” said Rihito Kuroda, IEDM 2019 Publicity Chair and Associate Professor at Tohoku University. “While CMOS scaling remains very important and IEDM once again will feature the latest work in that area, many diverse new, fast-growing applications demand different types of devices. Therefore, we have reorganized the technical subcommittee structure of IEDM to better align the conference with the innovative semiconductor concepts and technologies required.”
“The heart of the IEDM conference is the technical program,” said Dina Triyoso, IEDM 2019 Publicity Vice Chair and Technologist at TEL Technology Center America, “but the conference is also known for the many opportunities it affords attendees to interact directly with the world’s technology leaders.”
Here are details of the 2019 IEDM:
90-Minute Tutorials – Saturday, Dec. 7
The 90-minute Saturday tutorial sessions on emerging technologies have become a hugely popular part of IEDM. They are presented by experts in the fields, the goal being to bridge the gap between textbook-level knowledge and leading-edge current research. The topics for 2019 are:
- Oxide Semiconductors and TFTs: What is Different from Conventional Semiconductors? Hideo Hosono, Tokyo Institute of Technology
- Cryogenic MOSFET Modeling, Christian Enz, EPFL
- FEFE Memory (FRAM, FTJ and NCFETs), Johannes Mueller, GLOBALFOUNDRIES
- In-Memory Computing for AI, Abu Sebastian, IBM
- 3D-Monolithic Integration, Perrine Batude, Leti
- Magnetic Sensors, Keith Green, TI
Short Courses – Sunday, Dec. 8
Early registration for the full-day Sunday Short Courses is recommended, as they are often sold out. They offer the opportunity to learn about important areas and developments, and to network with global experts.
- Technology Scaling in the EUV Era and Beyond, organized by Wook-Hyun Kwon, Samsung
- Future of Computing: From Core to Edge Computing, Karim Arabi, Qualcomm
- Logic Transistor Options for 3nm Node and Beyond, Jin Cai, TSMC
- Advanced Processes for Technology Scaling Beyond 3nm, HooChur Kim, Samsung
- Design Technology Co-Optimization for Advanced Scaling,Lars Liebmann, TEL
- Novel Interconnect Techniques for CMOS Technologies in the EUV Era, Chris Wilson, IMEC
- Low-Power Device Solutions for Ultra-Low-Power Computing, Arokia Nathan, Univ. of Cambridge
- Technologies for Memory-Centric Computing, organized by Ali Keshavarzi, Stanford University
- Emerging Memories on Advanced Technology Nodes,Oleg Golonzka, Intel
- Advanced DRAM, 3D-stacked SDRAM and HBM Technologies,Kyomin Sohn, Samsung
- Novel 3D NAND, Lower Latency NAND and Persistent Memory Technologies, Jian Chen,Western Digital
- Emerging Memory and AI Technologies, Edith Beigne, Facebook
- Requirements of Advanced Memory Devices, Alessandro Calderoni, Micron Technology
- Advanced Memory-Centric Computing: A Device, Circuit and System Perspective, Arijit Raychowdhury, Georgia Tech.
Luncheon – Tuesday, Dec. 11
IEDM will have a career-focused luncheon this year featuring industry and scientific leaders talking about their personal experiences in the context of career growth. It will be moderated by Jungwoo Joh of Texas Instruments, and this year’s speakers will be Ramune Nagisetty from Intel and Linda Sommerville from Micron.
Evening Panel Session – Tuesday evening, Dec. 11
IEDM 2019 will offer attendees an evening session where experts will give their views on important industry topics in a fun, engaging format. Audience participation is encouraged to foster an open and vigorous exchange of ideas. The title of this year’s evening panel is “Rest in Peace Moore’s Law, Long Live Artificial Intelligence,” organized by Vijay Narayanan, IBM Fellow and Manager, Materials Research.
Vendor Exhibition/Poster Sessions
- A vendor exhibitionwill be held once again.
- This year two poster sessions will be held, one on MRAM technology organized by the IEEE Magnetics Society, the other a student research showcase hosted by the Semiconductor Research Corporation.
Further information about IEDM
For registration and other information, visit www.ieee-iedm.org.
[1]The Focus Sessions will be detailed in a separate news release.
