3D-Micromac AG, the industry leader in laser micromachining and roll-to-roll laser systems for the semiconductor, photovoltaic, glass and display markets, today announced that new developments with its laser micromachining solutions used in manufacturing power devices, magnetic sensors, and microLEDs, as well as in semiconductor advanced packaging, will be highlighted at SEMICON West, to be held July 11-13, 2023 in San Francisco.
“Since the first working laser was developed more than 60 years ago, lasers have been used in a wide array of industrial markets. Within the semiconductor industry, lasers play many roles, from wafer dicing, surface structuring, and sample preparation to ablation, sintering, via drilling and patterning. As the leading specialist in laser micromachining, 3D-Micromac offers cost-effective, scalable and versatile products and solutions to support our customers’ needs from development and prototyping through volume production. We look forward to highlighting these solutions, as well as the many applications that they enable, next week at SEMICON West,” stated Uwe Wagner, CEO of 3D-Micromac.
Laser annealing improves power device performance
According to Yole Intelligence, the silicon carbide (SiC) power device market is projected to achieve a compound annual growth rate (2021-2027) of more than 30 percent to reach beyond US$6 billion in 2027. Benefits of SiC power devices include boosting power efficiency and minimizing energy loss in electric vehicles (EVs), hybrid EVs, power supplies, and solar and wind inverters. While much goes into the development of SiC power devices, the formation of ohmic contacts on the backside of these devices plays a key role in defining their electrical characteristics and mechanical strength.
The microPRO XS OCF system from 3D-Micromac is ideally suited for ohmic contact formation (OCF) in SiC power devices due to its high precision and repeatability, and low thermal leakage, which prevent thermal damage to the wafer frontside that can negatively affect device performance. The system features a UV-wavelength diode-pumped solid-state laser source with nano-second pulses and spot scanning to process the entire metalized backside of SiC wafers while preventing the generation of large carbon clusters and heat-related damage to the frontside of the wafer. New features include:
- Large energy density process window that ensures constant stable forward voltage, leading to higher uptime and yield
- Special tool design that minimizes footprint and lowers cost of ownership
- Ability to process 200-mm SiC wafers without stitching, which avoids the creation of dead zones that can negatively impact yield and device quality
According to Yole Intelligence, the silicon carbide (SiC) power device market is projected to achieve a compound annual growth rate (2021-2027) of more than 30 percent to reach beyond US$6 billion in 2027. Benefits of SiC power devices include boosting power efficiency and minimizing energy loss in electric vehicles (EVs), hybrid EVs, power supplies, and solar and wind inverters. While much goes into the development of SiC power devices, the formation of ohmic contacts on the backside of these devices plays a key role in defining their electrical characteristics and mechanical strength.
The microPRO XS OCF system from 3D-Micromac is ideally suited for ohmic contact formation (OCF) in SiC power devices due to its high precision and repeatability, and low thermal leakage, which prevent thermal damage to the wafer frontside that can negatively affect device performance. The system features a UV-wavelength diode-pumped solid-state laser source with nano-second pulses and spot scanning to process the entire metalized backside of SiC wafers while preventing the generation of large carbon clusters and heat-related damage to the frontside of the wafer. New features include:
- Large energy density process window that ensures constant stable forward voltage, leading to higher uptime and yield
- Special tool design that minimizes footprint and lowers cost of ownership
- Ability to process 200mm SiC wafers without stitching, which avoids the creation of dead zones that can negatively impact yield and device quality