Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL), a designer, developer, and global supplier of a broad range of power semiconductors and power ICs, today introduced the “Source Down” in a DFN 5×6 package in combination with a 40V Shield-Gate Technology (AlphaSGT™). AOS’ innovative flip-chip know-how achieves the Source Down capability and this packaging technology offers a very low package resistance and inductance. The AOE66410 is ideally suited in telecommunications applications for secondary rectification (SR), in half bridge configuration for BLDC motor applications, and battery management where paralleling is important.
The AOE66410 (40V), has the same form factor of a standard DFN 5×6 package but the Source pad has the largest connection to the PCB. This will enable power supply designers to parallel devices more easily and have a larger thermal area to dissipate any losses. The AOE66410 has a 1mOhms max at 10Vgs with a maximum drain current of 100A at 25°C case temperature.
“Source Down can offer a significant improvement in PCB layout and simplify new parallel designs, which are suited for high-power telecommunication power supplies,” said Peter H. Wilson, Marketing Director of the MOSFET product line at AOS.