Shannon Davis

News and Web Editor

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Shannon, writes, edits and produces Semiconductor Digest’s news articles, email newsletters, blogs, webcasts, and social media posts. She holds a bachelor’s degree in journalism from Huntington University in Huntington, IN. In addition to her years of freelance business reporting, Shannon has also worked in marketing and public relations in the renewable energy and healthcare industries.

TSMC to Build Multi-Billion-Euro Chip Factory in Germany

Taiwanese semiconductor manufacturer TSMC plans to construct a massive new production facility in the eastern German city of Dresden.

NEO Semiconductor 3D X-DRAM Awarded “Best of Show” for Most Innovative Memory Technology

NEO Semiconductor, a developer of innovative technologies for 3D NAND flash and DRAM memory, today announced that its ground-breaking technology, 3D X-DRAM, captured the top prize at Flash Memory Summit 2023, winning the “Best of Show” award for the Most Innovative Memory Technology.

Researchers Discover a Potential Application of Unwanted Electronic Noise in Semiconductors

Random telegraph noises in vanadium-doped tungsten diselenide can be tuned with voltage polarity.

Membrion Series B Round Closes at $12.5M

Samsung Ventures and Lam Capital invest in Membrion sustainable solutions for industrial and semiconductor wastewater.

Governor Hochul Announces the Establishment of World-Class AMD Design Centers in New York State

High-performance semiconductor design company commits to creating 165 new jobs in two New York State locations.

Intel Federal, Qorvo, Ayar Labs, and Lockheed Martin ATL Win Co-Packaged Analog-Drive High-Bandwidth Optical Input/Output (KANAGAWA) Prototype Project

The Strategic and Spectrum Missions Advanced Resilient Trusted Systems (S²MARTS) OTA announced Ayar Labs, Intel, Lockheed Martin ATL, and Qorvo are the prime awardees of the Co-Packaged Analog-Drive High-Bandwidth Optical Input/Output (KANAGAWA) prototype project.

2023 Semiconductor Materials Market Slowing but Resilient

Material growth to resume in 2024 as industry recovers and fabs ramp up.

Crystal IS and Asahi Kasei Announce First 4-inch Aluminum Nitride Substrate

Crystal IS has achieved 4-inch (100 mm) diameter bulk aluminum nitride substrate.

SK hynix Showcases Samples of World’s First 321-Layer NAND

SK hynix Inc. showcased today the sample of the 321-layer 4D NAND, making public the progress on its development of the industry’s first NAND with more than 300 layers.

SEMIFIVE Enters China Market with New Office in Shanghai, China

Continues expansion into one of the fastest growing global regions deploying custom chips.