FUJIFILM Corporation today announced that the company has entered into a definitive agreement to acquire the semiconductor high purity process chemicals (HPPC) business, CMC Materials KMG Corporation (KMG), from the US-based Entegris, Inc. for $700 million.
World-Leading Semiconductor Manufacturers Place Multiple Orders For Veeco’s Laser Spike Annealing Platform
Veeco Instruments Inc. announced today that it received multiple orders for Laser Spike Annealing (LSA) systems from a world leading memory device manufacturer.
Save the Date: Gordon Moore Tribute, June 1
An event to commemorate the life, work and legacy of Intel’s co-founder is planned for June 1.
New Method Uses Engineered Bacteria and AI to Sense and Record Environmental Signals
New method uses engineered bacteria and AI to sense and record environmental signals.
With 7 Months Still to Go, Over 100 Exhibitors Confirmed for the UK’s Largest EV Event
The London EV Show is all set to be bigger and better than ever before, with the confirmation of over 100 exhibitors just a few months ahead of the event launch.
GlobalFoundries Announces Chief Financial Officer Transition and Names New Chief Business Officer
GlobalFoundries today announced the appointment of two new senior executives to its leadership team.
Silicon Carbide E-Fuse Demonstrator Provides a Faster, More Reliable Method for Protecting Power Electronics in Electric Vehicle Applications
Microchip Technology today announces the E-Fuse Demonstrator Board, enabled by silicon carbide (SiC) technology, available in six variants for 400–800V battery systems and with a current rating up to 30 amps.
Silicon Carbide (SiC) Wafer Supply Gets Squeezed
TECHCET is forecasting continued strong growth for silicon carbide (SiC) wafer through 2023, despite the slowdown in the general global economy and other semiconductor materials markets.
Mitsubishi Electric to Ship Samples of SBD-embedded SiC-MOSFET Module
Mitsubishi Electric Corporation announced today that it will begin shipping samples of a new Schottky barrier diode (SBD)-embedded silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) module.
ROHM Begins Mass Production of 650V GaN HEMTs that Deliver Class-Leading Performance
ROHM Semiconductor today announced mass production of 650V GaN (Gallium Nitride) HEMTs GNP1070TC-Z and GNP1150TCA-Z optimized for a wide range of power supply systems applications.
