Shannon Davis

News and Web Editor

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Shannon, writes, edits and produces Semiconductor Digest’s news articles, email newsletters, blogs, webcasts, and social media posts. She holds a bachelor’s degree in journalism from Huntington University in Huntington, IN. In addition to her years of freelance business reporting, Shannon has also worked in marketing and public relations in the renewable energy and healthcare industries.

Flex Logix Pairs its InferX X1 AI Inference Accelerator with the High-Bandwidth Winbond 4Gb LPDDR4X Chip to Set a New Benchmark in Edge AI Performance

Winbond Electronics Corporation, a leading global supplier of semiconductor memory solutions, today revealed that its low-power, high-performance LPDDR4X DRAM technology is supporting the latest breakthrough in edge computing from Flex LogixÒ for demanding Artificial Intelligence (AI) applications such as object recognition.

STMicroelectronics Joins ZETA Alliance to Promote Emerging Long-Range IoT Connectivity Standard

STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, has joined the ZETA Alliance, the industry body promoting ZETA Low-Power Wide Area Network (LPWAN) technology for low-cost long-range IoT connectivity.

EdgeQ Adds Former Qualcomm CEO Paul Jacobs & CTO Matt Grob as Advisors to Disrupt the Current Closed RAN Ecosystem with RISC-V based Highly Programmable 5G and AI Platform

EdgeQ Inc, a 5G systems-on-a-chip company, announced today that Dr. Paul Jacobs and Matt Grob have joined the advisory board.

CEA-Leti Reports Breakthrough High-Performance Gyroscope For Automotive, Aeronautic and Industrial Applications

CEA-Leti scientists, working with researchers at Politecnico di Milano, have developed the world’s first high-performance gyroscope for operating in severe environments, such as industrial and aeronautic equipment and automobiles.

Micron Delivers Industry’s First 1α DRAM Technology

Micron Technology today announced volume shipment of 1α (1-alpha) node DRAM products built using the world’s most advanced DRAM process technology and offering major improvements in bit density, power and performance.

Hprobe, Leader in Magnetic Field Testing Creates Subsidiary in Germany and Receives First Order from Fraunhofer IPMS

Hprobe, a provider of turnkey semiconductor Automatic Test Equipment (ATE) for magnetic devices, today announced the establishment of a subsidiary company, Hprobe GmbH located in Cologne, Germany.

ITRI and DuPont Jointly Inaugurate Semiconductor Materials Laboratory

Industrial Technology Research Institute (ITRI) and DuPont Electronics & Imaging (DuPont) today celebrated the opening of a new semiconductor materials laboratory in Hsinchu, Taiwan.

Amber Solutions Closes 2020 With Series B Funding Totaling More than $8.5 Million

Amber Solutions, the young Silicon Valley company that is making the digital control of electricity in solid-state architecture a commercial reality, today announced that its 2020 series B funding round raised more than $8.5 million from new and existing investors, following a successful year of secured patents, partner discussions and multiple industry award wins.

STMicroelectronics Powers Creative NFC Applications with Dynamic Message Content and Anti-Tamper in New Type-5 Tags

Uniquely combining NFC Type-5 properties with augmented NDEF (NFC Data Exchange Format) and tamper detection, STMicroelectronics’ST25TV512C and ST25TV02KC tags let developers leverage NFC contactless communication in new and imaginative ways for applications in consumer engagement, brand recognition, supply-chain management, and access control.

Titanium Oxide Nanotubes Facilitate Low-Cost Laser-Assisted Photoporation

A research team at the Department of Mechanical Engineering at Toyohashi University of Technology developed a nanosecond pulse laser-assisted photoporation method using titanium-oxide nanotubes (TNTs) for highly efficient and low-cost intracellular delivery.