Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has successfully shipped one million of the industry’s first 10nm-class (D1x) DDR4 (Double Date Rate 4) DRAM modules based on extreme ultraviolet (EUV) technology. The new EUV-based DRAM modules have completed global customer evaluations, and will open the door to more cutting-edge EUV process nodes for use in premium PC, mobile, enterprise server and datacenter applications.

Since its discovery in 2014, phosphorene – a sheet of phosphorus atoms only a single atom thick – has intrigued scientists, due to its unique optoelectronic anisotropy. In other words, electrons interact with light and move in one direction only. This anisotropy means that despite being two dimensional (2D), phosphorene shows a mix of properties found in both one-dimensional (1D) and 2D materials. Scientists believe that the distinct quasi-1D nature of phosphorene could be exploited to develop new, innovative optoelectronic devices, from LEDs to solar cells.

An international group of scientists, including some from ITMO University, has proposed a method that allows for significantly increasing the efficiency of solar cells and light-emitting diodes. The scientists managed to achieve this result by augmenting the auxiliary layers of the devices responsible for electron transport rather than working with the main active layer. The work has been published in the journal Advanced Functional Materials.

Transistors in computer chips work electrically, but data can be transmitted more quickly by using light. For this reason, researchers have long been looking for a way to integrate lasers directly in silicon chips. Scientists from Forschungszentrum Jülich have now come a step closer to achieving this.