Shannon Davis

News and Web Editor

6723 Articles0 Comments

Shannon, writes, edits and produces Semiconductor Digest’s news articles, email newsletters, blogs, webcasts, and social media posts. She holds a bachelor’s degree in journalism from Huntington University in Huntington, IN. In addition to her years of freelance business reporting, Shannon has also worked in marketing and public relations in the renewable energy and healthcare industries.

Imec Shows Excellent Performance in Ultra-Scaled FETs with 2D-Material Channel

At this year’s IEEE International Electron Devices Meeting (Dec 7-11 2019), imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, reports an in-depth study of scaled transistors with MoS2 and demonstrates best device performance to date for such materials.

Creating Switchable Plasmons in Plastics

Researchers in the Organic Photonics and Nano-optics goup at the Laboratory of Organic Electronics have developed optical nanoantennas made from a conducting polymer. The antennas can be switched on and off, and will make possible a completely new type of controllable nano-optical components.

memsstar Ships MEMS Production System to University of Freiburg in Support of the PROMYS Project

memsstar Ltd., a provider of etch and deposition equipment to manufacturers of semiconductors and microelectrical mechanical systems (MEMS), announced today shipment of its three-chamber ORBIS™ 3000 system for MEMS research and manufacturing to the Department of Microsystems Engineering (IMTEK) at the University of Freiburg, Germany. As part of the nationally funded project, “Processes and Materials for More-than-Moore Electronic Systems (PROMYS),” memsstar’s surface micromachining cluster tool will serve as a central unit for the micromechanical structuring of MEMS components for up to 200mm wafers.

Intel Introduces ‘Horse Ridge” to Enable Commercially Viable Quantum Computers

Intel Labs today unveiled what is believed to be a first-of-its-kind cryogenic control chip — code-named “Horse Ridge” — that will speed up development of full-stack quantum computing systems.

SiFive Retains Title of Most Respected Private Semiconductor Company

SiFive, the leading provider of commercial RISC-V processor IP and silicon solutions, today announced it has been recognized for the second consecutive year as the Most Respected Private Semiconductor Company by the Global Semiconductor Alliance (GSA) at the GSA Awards Dinner on Dec. 5, 2019. This recognition tops a milestone year for the company, which announced more than 130 design wins, completed Series D investments to secure over $100M total funding to date and continued to attract the industry’s top talent.

Analog Devices Files Patent Infringement Lawsuit Against Xilinx

Analog Devices, Inc. (Nasdaq: ADI), a leading global high-performance analog technology company, today announced that it has filed a patent infringement lawsuit against Xilinx, Inc. (Nasdaq: XLNX). The lawsuit focuses on the unauthorized use by Xilinx of several important ADI patents relating to converter technology in at least two of Xilinx’s High End Zynq UltraScale+ RFSoC products.

Global Semiconductor Alliance Announces 2019 GSA Award Recipients

The Global Semiconductor Alliance (GSA) is proud to announce the award recipients honored at the 2019 GSA Awards Dinner Celebration that took place last evening in Santa Clara, Calif. For a quarter century, the GSA Awards have recognized the achievements of top performing semiconductor companies in several categories ranging from outstanding leadership to financial accomplishments, as well as overall respect within the industry.

Keysight, Marvin Test Solutions Collaborate to Speed Manufacturing of mmWave Semiconductors

Keysight Technologies, Inc. (NYSE: KEYS), a technology company that helps enterprises, service providers and governments accelerate innovation to connect and secure the world, announced that its collaboration with Marvin Test Solutions, Inc. (MTS) – a supplier of functional test solutions – has resulted in the development of a fast and accurate 5G semiconductor manufacturing test platform. The two parties focused on advancing beamformer integrated circuit (IC) test technology to help manufacturers of semiconductors accelerate the production of high performance 5G integrated ICs. Marvin – a trusted provider of globally-deployed test solutions for military, aerospace, and manufacturing organizations – integrated Keysight’s PXIe-based Vector Network Analyzer (VNA) to achieve accurate and fast measurements in its TS-960e-5G mmWave Test System.

Scientists See Defects in Potential New Semiconductor

A research team has reported seeing, for the first time, atomic scale defects that dictate the properties of a new and powerful semiconductor. The study, published earlier this month in the journal Physical Review X, shows a fundamental aspect of how the semiconductor, beta gallium oxide, controls electricity. Scientists have known about beta gallium oxide for about 50 years, but only in the last several years has it become an intriguing option for engineers looking to build more reliable, more efficient high-powered technologies. The material is especially well-suited for devices used in extreme conditions, such as in the defense industry. The team has been studying beta gallium oxide for its potential to provide high-density power.

Weebit Nano and Leti File Three New Patents for Improved Yield and Reliability of Advanced ReRAM Products

Weebit Nano (ASX: WBT), the next generation memory technology for the global semiconductor industry, and its development partner Leti, the French research institute recognised as a global leader in the field of micro-electronics, have filed three new patents for Weebit’s Silicon Oxide (SiOx) ReRAM
technology. The latest patents from Weebit and Leti use newly developed smart algorithms to increase the reliability and yield of ReRAM memory cells and enable scalable immune ReRAM process improvements. Two patents identify failure modes, in which optimised smart programming algorithms then improve the window margin and array yield. The third patent improves process flows, allowing increased stability at scaled memory cells in geometries of 40nm and below.