In addition to the lower profile, ST’s new 1500W SMB Flat package has transient-power capability equivalent to that of conventional devices in SMC packages, in a footprint more than 50% smaller. The 400W and 600W SMA Flat and SMB Flat devices are fully footprint-compatible with alternatives in conventional SMA and SMB packages. Leakage current is five times lower compared with other TVS diodes on the market, minimizing impact on system operation and power consumption.
Wafer Capacity by Feature Size Shows Rapid Growth at <10nm
Leading-edge processes (<28nm) took over as the largest portion in terms of monthly installed capacity available in 2015. By the end of 2019, <28nm capacity is forecast to represent about 49% of the IC industry’s total capacity, based on information in IC Insights’ Global Wafer Capacity 2019-2023 report.
Cadence Custom/AMS Flow Certified for Samsung 5LPE Process Technology
Cadence Design Systems, Inc. (NASDAQ: CDNS) today announced that its custom and analog/mixed-signal (AMS) IC design flow has achieved certification for Samsung Foundry’s 5nm Low-Power Early (5LPE) process technology. This certification ensures mutual customers of Cadence and Samsung Foundry have immediate access to a highly automated circuit design, layout, signoff and verification flow needed to design efficiently at 5LPE.
Double Layer of Graphene Helps to Control Spin Currents
Electrons have a negative charge, but they also behave like tiny magnets. This property of electrons, called spin, can be used to transport or store information in electronic circuits. Scientists are looking for ways to create such spin-based electronics, as this is probably more energy efficient than normal electronics. University of Groningen physicist Siddhartha Omar discovered a way to transport spins over long enough distances to make such devices feasible. Furthermore, the material he used enabled him to control these spin currents.
Paving a Way to Achieve Unexplored Semiconductor Nanostructures
Nanowire is a rod-structure with a diameter typically narrower than several hundred nanometers. Due to its size and structure, it exhibits characteristic properties which are not found in larger bulk materials. The study of III-V semiconductor nanowires has attracted much interest in recent decades due to their potential application in nanoscale quantum, photonic, electronic, and energy conversion, and in biological devices, based on their one-dimensional nature and large surface to volume ratio.
The Decade Ahead: Emerging MEMS & Sensors Technologies to Watch
Most of today’s blockbuster MEMS products – from pressure sensors and resonators to accelerometers and microphones – originated from academic research, a trend that Alissa M. Fitzgerald, Founder & Managing Member, A.M. Fitzgerald & Associates, expects to continue. While many of these potentially game-changing new technologies will require many more years of intensive development and up to $100 million in investment to reach full commercialization, Fitzgerald sees their potential for generating new waves of activity and opportunity in the MEMS and sensors industry.
IDT Offers Avalanche Technology’s MRAM Devices to Complement its Broad Range of Semiconductor Devices
Integrated Device Technology, Inc. (IDT), a wholly owned subsidiary of Renesas Electronics Corporation (TSE: 6723), today announced that it now offers Avalanche’s magnetic RAM (MRAM) devices to complement the extensive range of power, sensor, timing and microcontroller devices from Renesas. This allows IDT to serve as a single source for all the primary semiconductor devices manufacturers need for industrial control and automation systems, programmable logic controllers, medical diagnostic probes and equipment, multifunction printers, and IoT devices. Avalanche’s MRAM devices are ideal for high-speed, non-volatile memory applications such as program storage and data backup. IDT will offer Avalanche’s 4Mbit, 8Mbit and 16Mbit MRAM devices in two packages (SOIC and WSON) with two different temperature ratings (85°C and 105°C). Available speeds will be up to 108Mhz, with configurable interfaces for SPI, DPI, QPI with Single-Data-Rate and Double-Data-Rate modes.
Synopsys Design Platforms Enabled for Samsung Foundry 2.5D-IC Multi-Die Integration
Synopsys, Inc. today announced availability of design solutions to support Samsung Foundry’s 2.5D-IC Multi-Die Integration (MDI™) on its 7-nanometer (nm) LPP (Low Power Plus) with extreme ultraviolet (EUV) lithography technology, known as 7LPP. The Synopsys Fusion Design Platform™ and Custom Design Platform enable quicker design prototyping and analysis to help designers address the time-to-market pressures associated with delivery to accelerating markets, such as 5G, artificial intelligence (AI), and high-performance computing (HPC).
Cadence 3D-IC Advanced Packaging Integration Flow Certified by Samsung Foundry for its 7LPP Process Technology
The use of multiple stacked chips in a single package is becoming a key trend for mobile, IoT and data center designs, which is also extending into the AI and 5G market segments due to the rapid and efficient integration of complete functions that can be implemented via the optimal process node into a system in package (SiP). The Cadence technology provides customers with analysis, implementation and physical verification capabilities within a single canvas and offers unique, early-stage system-level pathfinding and highly-complex design capabilities for 3D signoff. The Cadence flow has been optimized to enable customers to achieve all the benefits the Samsung Foundry MDI packaging technology has to offer in order to deliver new products to market with greater speed and agility.
Reducing Open-Circuit Voltage Loss in Organic Solar Cells
The power conversion efficiencies of organic solar cells (OSCs) based on blends of electron donor (D) and acceptor (A) semiconducting materials now exceed 16%. However, it is still lower than that of highly efficient inorganic SCs such as GaAs. The…