The Krach Institute for Tech Diplomacy at Purdue announced today that its CEO, Michelle Giuda, has been unanimously confirmed by the U.S. Senate to serve on the newly formed bipartisan International Broadcasting Advisory Board.
MEMS
Stellantis Named Ideal Power Finalist in 2023 Stellantis Venture Awards
Ideal Power Inc., pioneering the development and commercialization of the highly efficient and broadly patented B-TRAN bidirectional semiconductor power switch, announced Stellantis, a top 10 global automaker, recognized Ideal Power and its program with Stellantis as a finalist in the 2023 Stellantis Venture Awards.
Closing the Design-to-Manufacturing Gap for Optical Devices
A new method enables optical devices that more closely match their design specifications, boosting accuracy and efficiency.
Global Semiconductor Industry Outlook Worth $616.5B by 2024
The global semiconductor market will experience a robust upswing in 2024, with significant growth expected across the discrete, sensors, analog, logic, micro, and memory segments.
Morse Micro Adds Semiconductor Veteran Sam Heidari to Board of Directors
Morse Micro, a fast-growing fabless semiconductor company focused on Internet of Things (IoT) connectivity with its Wi-Fi HaLow technology, today announced that semiconductor industry veteran Dr. Sam Heidari is joining its board of directors.
Imec and Mitsui Chemicals Sign Strategic Partnership Agreement
The signing took place in Tokyo during SEMICON Japan 2023.
CEA-Leti Develops CMOS-Compatible 200mm Process Technology Close to State-of-the-Art GaN/SiC Performance at Lower Cost
Technology for 5G & 6G infrastructure, satcom, radar for UAV detection and other applications uses existing cleanrooms with larger substrates.
Imec’s Extremely Scaled SOT-MRAM Devices Show Record Low Switching Energy and Virtually Unlimited Endurance
Scaling the spin-orbit transfer (SOT) track as a critical step towards SOT-MRAM for cache memory applications.
CEA-Leti Reports Breakthrough 3D Sequential Integration (3DSI) Of CMOS Over CMOS with Advanced Metal Lines
Achievement establishes the feasibility of manufacturing high-performance silicon CMOS devices above an industrial platform, including state-of-the-art BEOL, without compromising the performance of the bottom layer.
Imec Demonstrates GaN-on-Si MISHEMTs With Excellent Performance for 5G-Advanced Base Station and Mobile Device Applications
This week, at the 2023 International Electron Devices Meeting (IEEE IEDM 2023), imec presents aluminum-nitride/gallium-nitride (AlN/GaN) metal-insulator-semiconductor high-electron mobility transistors (MISHEMTs) on 200mm Si with high output power and energy efficiency while operating at 28GHz.
