Registration is open for the March 6-8 executive conference.
Packaging
SEALSQ to Establish an OSAT Center in Saudi Arabia
SEALSQ Corp. today announced a significant initiative to establish an Open Semiconductors Assembly and Test (OSAT) Center in Saudi Arabia.
CG Power and Industrial Solutions Limited, Renesas, and Stars Microelectronics, to Jointly Build OSAT Facility in India
The Union Cabinet, chaired by Prime Minister Shri Narendra Modi, approved the project of the JV under India’s Semiconductor scheme on February 29, 2024.
Pfeiffer Vacuum Introduces New HiCube Neo Turbo Pumping Station
With pumping speeds ranging from 80 to 800 l/s, the HiCube Neo vacuum pumping station is ideal for demanding high vacuum and ultra-high vacuum applications.
Electronics Industry Praises U.S. Government Notice of Funding Opportunity for “Advanced Packaging” Technologies
IPC, the global association for electronics manufacturing, praised today’s issuance from the CHIPS for America R&D Office, through the National Institute of Standards and Technology (NIST), of a Notice of Funding Opportunity (NOFO) for research and development activities that will establish and accelerate domestic capacity for advanced packaging substrates and substrate materials.
CHIPS for America Announces Funding Opportunity to Expand U.S. Semiconductor Packaging
Today, the U.S. Department of Commerce issued a Notice of Funding Opportunity (NOFO) to seek applications for research and development (R&D) activities that will establish and accelerate domestic capacity for advanced packaging substrates and substrate materials, a key technology for manufacturing semiconductors.
Wise-integration Raises €15 Million in Series B Funding Round to Support International Growth for Its Innovative GaN Solutions
Wise-integration, a French pioneer in digital control of gallium nitride (GaN) and GaN ICs for power supplies, today announced financing of €15 million.
Silicon Wafers Market – Growth on the Horizon 2024-2028
Wafer shipments expected to pick up in late 2024.
Ancora’s Double Side Cooling GaN-FET Demonstrates Superior Robustness and Long Term Reliability
Ancora Semiconductor Inc. has recently passed a series of rigorous DMTBF (Demonstrated Mean Time Between Failures) tests for its double-sided cooling GaN (Gallium Nitride) field-effect transistor.
Samsung and Nova Publish Joint Research at SPIE Advanced Lithography Conference
The papers will be presented at the SPIE by Nova and Samsung, at the Metrology, Inspection and Process Control conference.
