Intel and the Gordon and Betty Moore Foundation announced that company co-founder Gordon Moore died on March 24, 2023, at the age of 94.
Semiconductors
Ruggedness of Cambridge GaN Devices’ ICeGaN Technology Proven in Virginia Tech Paper at APEC
70 V over-voltage capability combines with intelligent on-chip protection to deliver highest GaN reliability and ruggedness.
FUJIFILM Electronic Materials, U.S.A., Inc. Invests in Enhanced Sustainability for its Mesa, Ariz. Campus
FUJIFILM Electronic Materials, U.S.A., Inc., announced today key sustainability initiatives designed to increase the organization’s commitment to sustainable business practices, including solar panel installation and water conservation measures.
Investment Boom in Semiconductor Industry: Exyte Expands Engineering and Production Capacities in Czech Republic
Exyte, a global leader in the design, engineering, and delivery of high-tech facilities, is expanding its engineering and production capacities in the Czech Republic.
Dell’Oro Group Launches New Data Center IT Semiconductors and Components Advanced Research Report
Dell’Oro Group announced today the launch of its new Data Center IT Semiconductors and Components advanced research report.
IDTechEx Discusses The Tantalizing Potential for GaN in Electric Vehicle Power Electronics
As electric vehicle (EV) power electronics undergoes a paradigm shift towards wide bandgap (WBG) semiconductors, it is clear that silicon carbide (SiC) is becoming the material of choice, while gallium nitride (GaN) is often shoe-boxed into telecommunications or optoelectronics applications.
Alphawave Semi Opens Pune Office, Continues Expansion into India
Alphawave Semi today announced the opening of its latest office in Pune, India, bolstering its existing footprint in the country and growing its capabilities in custom silicon and connectivity IP.
Nova Opens New Large-Scale Clean Room in Israel
Nova announced today the opening of its new production facility in Israel. The clean room aims at expanding Nova’s production capacity and complements the existing facilities, allowing the Company to improve production procedures and yields.
Bare Die SiC from ROHM Chosen by Apex Microtechnology for Newest Line of Power Modules
ROHM Semiconductor today announced that precision power analog company Apex Microtechnology is adopting ROHM’s silicon carbide (SiC) MOSFETs and SiC Schottky Barrier Diode (SBD) for a new line of power modules.
Pusan National University Researchers Explain the Mechanism Behind High Anisotropic Evaporation Rate of Zinc Oxide Polar Surface
The high rate of anisotropic evaporation of the zinc oxide (ZnO) (0001) polar surface has been long known but remained unexplained. Now, a group of researchers from Korea, Germany, and France has explained this phenomenon using atomic-scale observations and computational simulations.
