Monday afternoon at the 2012 IEEE International Electron Devices Meeting, IBM discussed their 22nm SOI high-performance technology [1], aimed at servers and high-end SoC products. To an extent, this is an extension of the 32nm process, using epitaxial SiGe for the PMOS channels and stress, and dual-stress liners for both NMOS and PMOS strain. However, there were a couple of surprises buried in there — at least for me! The…
Uncategorized
IBM surprises with 22nm details at IEDM
Monday afternoon at the 2012 IEEE International Electron Devices Meeting, IBM discussed their 22nm SOI high-performance technology [1], aimed at servers and high-end SoC products. To an extent, this is an extension of the 32nm process, using epitaxial SiGe for the PMOS channels and stress, and dual-stress liners for both NMOS and PMOS strain. However, there were a couple of surprises buried in there — at least for me! The…
Intel details 22nm trigate SoC process at IEDM
After launching their 22nm tri-gate high-performance logic product back in the spring, Intel have been promising to show off their SoC derivative, and yesterday was the day at the 2012 IEEE International Electron Devices Meeting. [1] As you can see from Table 1, we now have six transistor options; the high-voltage transistors use a thicker gate dielectric stack (Fig. 1), and the gate pitch and gate lengths have been tuned…
Intel details 22nm trigate SoC process at IEDM
After launching their 22nm tri-gate high-performance logic product back in the spring, Intel have been promising to show off their SoC derivative, and yesterday was the day at the 2012 IEEE International Electron Devices Meeting. [1] As you can see from Table 1, we now have six transistor options; the high-voltage transistors use a thicker gate dielectric stack (Fig. 1), and the gate pitch and gate lengths have been tuned…
Intel details 22nm trigate SoC process at IEDM
After launching their 22nm tri-gate high-performance logic product back in the spring, Intel have been promising to show off their SoC derivative, and yesterday was the day at the 2012 IEEE International Electron Devices Meeting. [1] As you can see from Table 1, we now have six transistor options; the high-voltage transistors use a thicker gate dielectric stack (Fig. 1), and the gate pitch and gate lengths have been tuned…
Present your ideas at The ConFab in 2013
The ConFab is now accepting abstract submissions for our 2013 conference, to be held June 23-26 in Las Vegas. If you’re an executive at a leading semiconductor manufacturer and would like to present at The ConFab and participate in three days of productive meetings and roundtable discussions, we’d like to hear from you! We’re presently recruiting speakers for the following topics: • Economic outlook of the semiconductor and related industries…
Preview of the MEMS Technology Showcase at MEMS Executive Congress US 2012
If I must tell the truth, the genesis of MEMS Technology Showcase began (as many great ideas do) at a bar over beers, the closing night of MEMS Executive Congress 2010. I was talking with Bryan Hoadley of Movea, who had just spoken on the MEMS in Consumer panel. He and I talked about what the MEMS industry needs — a way to show how cool the MEMS inside is…
Preview of our fabulous keynotes at MEMS Executive Congress US 2012
by Karen Lightman, managing director, MEMS Industry Group Recently I was talking with a MIG member about what was unique about this year’s Congress. I actually surprised myself when I instantly blurted out, "the keynotes!" Normally, I would talk about how cool the MEMS Technology Showcase is (and it is — really, it is!) And you’ll soon hear about it in an upcoming story/blog). But honestly, when I answer from…
Preview of MEMS in consumer products panel at MEMS Executive Congress US 2012
By Karen Lightman, managing director, MEMS Industry Group I remember the first time we had a panel on consumer MEMS products at the MEMS Executive Congress. It was November 2006: Marlene Bourne was our moderator and our panelists were: Frank Melzer (CEO of the newly formed Bosch Sensortec); Benedetto Vigna (back then his title was MEMS business unit director, STMicroelectronics); Mark Martin’s predecessor, Bill Giudice, vice president and general manager,…
GlobalFoundries takes on Intel with 14nm finFET “eXtreme Mobility” process
A week after Intel were claiming that their 14nm process will be ready to go at the end of next year, GLOBALFOUNDRIES (GF) announced that they will have a 14nm finFET process for launch in 2014. Unfortunately they timed it to coincide with the iPhone 5, so we at Chipworks were tied up for a few days tearing it down. However, I don’t want to ignore this development — it…
Featured Products
