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Next week the researchers and practitioners of the electron device world will be gathering in Washington D.C. for the 2011 IEEE International Electron Devices Meeting. To quote the conference web front page, “IEDM is the world’s pre-eminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS…

Next week the researchers and practitioners of the electron device world will be gathering in Washington D.C. for the 2011 IEEE International Electron Devices Meeting. To quote the conference web front page, “IEDM is the world’s pre-eminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS…

I was browsing through the advance program for the upcoming IEDM conference when, almost at the end, I came across paper number 34.4, "Modeling of NMOS Performance Gains from Edge Dislocation Stress," by Weber et al. of Intel. According to the abstract: "Simulations show stress from edge dislocations introduced by solid phase epitaxial regrowth increases as gate pitch is scaled, reaching over 1GPa. This makes edge dislocations attractive, as stress…

I was browsing through the advance program for the upcoming IEDM conference when, almost at the end, I came across paper number 34.4, "Modeling of NMOS Performance Gains from Edge Dislocation Stress," by Weber et al. of Intel. According to the abstract: "Simulations show stress from edge dislocations introduced by solid phase epitaxial regrowth increases as gate pitch is scaled, reaching over 1GPa. This makes edge dislocations attractive, as stress…

I was browsing through the advance program for the upcoming IEDM conference when, almost at the end, I came across paper number 34.4, "Modeling of NMOS Performance Gains from Edge Dislocation Stress," by Weber et al. of Intel. According to the abstract: "Simulations show stress from edge dislocations introduced by solid phase epitaxial regrowth increases as gate pitch is scaled, reaching over 1GPa. This makes edge dislocations attractive, as stress…

After much anticipation, and with quite a few design wins, AMD’s Llano CPU/GPU chip arrived on the scene a couple of months ago. Fabricated by GlobalFoundries (more easily known as GloFo) in their 32nm SHP process, it was the first foundry-based gate-first HKMG product to come on the market. As a processor, it garnered pretty favorable reviews, but of course we were keen to get it into the lab and…

After much anticipation, and with quite a few design wins, AMD’s Llano CPU/GPU chip arrived on the scene a couple of months ago. Fabricated by GlobalFoundries (more easily known as GloFo) in their 32nm SHP process, it was the first foundry-based gate-first HKMG product to come on the market. As a processor, it garnered pretty favorable reviews, but of course we were keen to get it into the lab and…

After much anticipation, and with quite a few design wins, AMD’s Llano CPU/GPU chip arrived on the scene a couple of months ago. Fabricated by GlobalFoundries (more easily known as GloFo) in their 32nm SHP process, it was the first foundry-based gate-first HKMG product to come on the market. As a processor, it garnered pretty favorable reviews, but of course we were keen to get it into the lab and…

22-nm Trigate Transistors Discussed At a morning session at the Intel Developer Forum Tuesday, Mark Bohr tooted the Intel trumpet and put a slide up to emphasise their lead over the other leading semiconductor companies: Intel Process Evolution Since 90-nm One can quibble a bit about the odd month here or there for the dates, but essentially things have been as they say — they were the first with embedded…

22-nm Trigate Transistors Discussed At a morning session at the Intel Developer Forum Tuesday, Mark Bohr tooted the Intel trumpet and put a slide up to emphasise their lead over the other leading semiconductor companies: Intel Process Evolution Since 90-nm One can quibble a bit about the odd month here or there for the dates, but essentially things have been as they say — they were the first with embedded…