Last month, Fractilia, a leader in stochastics metrology and control solutions for advanced semiconductor manufacturing, launched the latest version of its Fractilia Automated Measurement Environment (FAME) product, which uniquely provides highly accurate and precise measurement of stochastics, the single largest source of patterning errors at advanced semiconductor nodes. The announcement brought the multi-billion-dollar yield problem of stochastics to the forefront of the semiconductor process control world. Of course, technology breakthroughs like FAME don’t happen in a vacuum; they require collaborations with other companies that are at the leading edge.
At the 2022 SPIE Advanced Lithography + Patterning Conference next week, you can learn from the experience of these collaborations as Fractilia and several industry leaders present on the benefits of stochastics metrology to advanced semiconductor manufacturing. Industry luminary and Fractilia CTO Chris Mack will present two of these papers on stochastics metrology for improved 193-i and EUV patterning processes. In addition, he is teaching a course on stochastic lithography. The conference runs April 24-28, 2022, at The San Jose Convention Center in San Jose, Calif. Mark your calendar to discover for the first time and/or learn more about stochastics metrology from the leaders in the field.
Chris Mack, CTO of Fractilia – Course and Presentation Schedule
April 24 at 8:30 AM – 5:30 PM PDT in the Convention Center, Course at Event SC1263
“Stochastic Lithography”
- This course will look at how stochastic variation during lithography affects semiconductor devices, how to measure stochastic variations, the major causes of stochastic variation, and what stochastics will mean for the future of lithography scaling.
- To get more details on this presentation, click here.
April 25 at 4:10 PM – 4:30 PM PDT in the Convention Center, Grand Ballroom 220B
“Probabilistic Process Window: A new approach to focus-exposure analysis”
- Chris presents the differences between probabilistic and geometric approaches.
- To get more details on this presentation, click here.
April 27 at 5:30 PM – 7:30 PM PDT in the Convention Center, Hall 2 (Poster Session)
“Unbiased Roughness Measurement of Thin Resists”
- Chris provides an in-depth study about how the move to high-NA EUV and thinner resists drives the need for new metrology solutions that can provide unbiased roughness measurements.
- To get more details on this presentation, click here.
Fractilia Co-authored Papers – Presentation Schedule
April 27 at 10:40 AM – 11:00 AM PDT in the Convention Center, Grand Ballroom 220B
“Metrology of thin resist for high NA EUVL”
- Presented by Gian F. Lorusso, imec
- To get more details on this presentation, click here.
April 27 at 11:00 AM – 11:20 AM PDT in the Convention Center, Grand Ballroom 220B
“Low-voltage aberration-corrected SEM metrology of thin resist for high-NA EUVL”
- Presented by Mohamed Zidan, imec
- To get more details on this presentation, click here.
April 27 at 5:30 PM – 7:30 PM PDT in the Convention Center, Hall 2 (Poster Session)
“Spatial frequency analysis of LER and LWR to tune SADP process”
- Presented by Tzu-Shun Yang of Applied Materials, Inc.
- To get more details on this presentation, click here.
April 27 at 5:30 PM – 7:30 PM PDT in the Convention Center, Hall 2 (Poster Session)
“EUV dry resist single exposure patterning of sub-20nm tip-to-tip spacing of pitch ≤30nm line/space features with a 0.33NA scanner”
- Presented by Qinghuang Lin of Lam Research Corp.
- To get more details on this presentation, click here.
Click here to access the full list of Fractilia activities at the SPIE Advanced Lithography + Patterning Conference.
