Magnachip Expands Production of 7th Generation MXT LV MOSFETs

Magnachip Semiconductor Corporation announced today the expansion of production for its 7th generation 1)MXT LV MOSFETs, which are based on Magnachip’s Super Short Channel FET technology.

As mobile devices become more advanced, the demand for compact Low Voltage (LV) MOSFETs with low ²⁾R_SS(on) continues to grow. Magnachip’s MXT LV MOSFET product family offers exceptionally low R_SS(on), enabled by the SSCFET^® technology. This technology significantly reduces the channel length between the source and the drain during on-state operation, which effectively enhances battery performance and efficiency, extends battery life and reduces overheating.

Additionally, these MXT LV MOSFETs are manufactured using a 100μm-thin wafer-level chip scale package (WLCSP) to provide enhanced design flexibility. This makes them well-suited for a wide range of mobile devices, including smartphones, smartwatches, wireless earphones and next-generation ring-shaped devices.

Thanks to its proven high-quality products and reliable supply capabilities, Magnachip’s MXT LV MOSFET (MDWC0151ERH) has been integrated into a premium smartphone model from a major global smartphone manufacturer. Furthermore, the MDWC12D025ERH is now also being used in the manufacturer’s high-volume midrange model. In the first three quarters of 2024, production of MXT LV MOSFETs grew by approximately 120% compared to the same period in the previous year.

“Magnachip has established a strong collaborative relationship with a major global smartphone manufacturer,” said YJ Kim, CEO of Magnachip. “Through continued technological development and innovation, we will strengthen our MXT LV MOSFET product family and target not only the mobile device market but also a variety of battery-powered devices, such as e-bikes, scooters, e-cigarettes and drones.”

1)MXT LV MOSFET (Magnachip eXtreme Trench Low Voltage MOSFET): Magnachip’s cutting-edge product portfolio of 12~40V trench MOSFETs.

2)R_SS(on): On resistance, the resistance value between sources of two protected MOSFETs during operation (ON).