Rinse materials offer benefits of pattern collapse mitigation and defect improvement and, therefore, superior process margins for yield improvement. Defectivity is also significantly improved with an EUV rinse.
Intel 144-Tier Three-deck FG NAND with 161 Total Gates
A new 3D QLC NAND product has just arrived. TechInsights has quickly reviewed the Intel 1Tb QLC die removed from SSD 670p series which use 144L 3D NAND devices.
Acorn Technologies Prevails at Trial in Patent Infringement Lawsuit Against Samsung
Acorn Technologies today announced that a jury has found that Samsung Electronics Co., Ltd. infringed all asserted claims of four semiconductor-related patents at a recent trial in the U.S. District Court for the Eastern District of Texas.
Synopsys Expands Multi-Die Solution Leadership with Industry’s Lowest Latency Die-to-Die Controller IP
Synopsys, Inc. today announced its new DesignWare Die-to-Die Controller IP, which complements the company’s existing 112G USR/XSR PHY IP for a complete die-to-die IP solution.
Scientists from NTU and Rice University Uncover Secret Behind One of the World’s Toughest Materials
A team of scientists led by Nanyang Technological University (NTU Singapore) and Rice University in the US, has uncovered the key to the outstanding toughness of hexagonal boron nitride (h-BN).
Dominant Factor of Carrier Transport Mechanism in Multilayer Graphene Nanoribbons Revealed
Researchers precisely set the number of layers in multilayer graphene nanoribbons, controlling the semiconducting and metallic properties of field effect transistors and establishing a design guideline for the practical applications of graphene devices.
Samsung’s Semiconductor Sites Awarded Industry’s First ‘Triple Standard’ by Carbon Trust
All of Samsung’s global semiconductor manufacturing facilities certified for reducing carbon emissions, water use and waste discharge.
Hua Hong Semiconductor Achieved Mass Production of 12” 90nm BCD
Hua Hong Semiconductor Limited, a global specialty pure-play foundry, announced that its 90nm BCD process has received wide recognition from customers for its high performance index and compact chip size, and mass production has been achieved on Hua Hong Wuxi’s 12” production line.
IBM Announces 2nm GAA-FET Technology – the Sum of “Aha!” Moments
IBM likes to create a stir once in awhile, and judging by the tech-press response in the last week or three, they have achieved that goal with their announcement of 2-nanometer CMOS technology, developed at their Albany research centre. This technology is expected to give a 45% performance boost or 75% power reduction, compared with a 7-nm process. Of course the question is, compared with what 7-nm process?
NXP Announces Two Processors on TSMC 16nm FinFET Technology
NXP Semiconductors N.V. and TSMC today announced the release of NXP’s S32G2 vehicle network processors and the S32R294 radar processor into volume production on TSMC’s advanced 16nm FinFET process technology.
