DuPont Electronics & Imaging (E&I) today announced it has signed an agreement to sell its Compound Semiconductor Solutions (CSS) business to SK Siltron, a silicon wafer supplier to the semiconductor market based in South Korea.
New York State Lieutenant Governor Kathy Hochul Announces Nanotronics’ New High-Tech Manufacturing Facility
Nanotronics together with New York New York State Lieutenant Governor Kathy Hochul, announced that Nanotronics will open a high-tech manufacturing center at the Brooklyn Navy Yard, creating 190 new jobs and investing $11 million.
New Metamaterial Morphs Into New Shapes, Taking On New Properties
But it’s the defects that really make them interesting.
Penn Engineers’ New Topological Insulator Reroutes Photonic ‘Traffic’ On the Fly
Dynamic data routing could make for faster photonic chips that use their entire footprint.
Spin Devices Get a Paint Job
Simple copper becomes an effective spintronic component thanks to molecular film.
NI Helps Accelerate Test Program Development and Improve Operational Efficiency With NI Semiconductor Test System (STS) Software Enhancements
STS software enhancements help users improve efficiency and reduce test cost for semiconductor production test.
Semiconducting Material More Affected by Defects Than Previously Thought
Research opens up new possibilities for improving performance of halide perovskite.
Fabs Valued at Nearly $50 Billion to Start Construction in 2020
Investments in new fab projects starting construction in 2020 is expected to reach nearly US$50 billion, up about US$12 billion from 2019, according to the latest update of the World Fab Forecast from SEMI.
IBM and Fraunhofer Join Forces on Quantum Computing Initiative
IBM and Fraunhofer-Gesellschaft announced an agreement to partner in the area of quantum computing with the goal of advancing the research and experimentation in Germany.
Conductivity at the Edges of Graphene Bilayers
For nanoribbons of bilayer graphene, whose edge atoms are arranged in zigzag patterns, the bands of electron energies which are allowed and forbidden are significantly different to those found in monolayer graphene. This causes variations in the ways in which bilayers conduct electricity, according to research published in EPJ B.
