ROHM Semiconductor today announced the BM3G0xxMUV-LB series of power stage ICs with built-in 650V GaN HEMTs and gate drivers. The devices are ideal for primary power supplies inside industrial and consumer applications, such as data servers and AC adapters.
Consumer and industrial sectors are increasingly demanding greater energy savings to achieve a sustainable society. While GaN HEMTs are expected to significantly contribute to greater miniaturization and improved power conversion efficiency, the difficulty in handling the gate compared to silicon MOSFETs requires the use of a dedicated gate driver. In response, ROHM developed power stage ICs that integrate GaN HEMTs and gate drivers into a single package by leveraging core power and analog technologies, accelerating the mounting process.
In addition, the BM3G0xxMUV-LB series (BM3G015MUV-LB, BM3G007MUV-LB) incorporates functions and peripheral components designed to maximize GaN HEMT performance, along with 650V GaN HEMTs – the next generation of power devices. ROHM’s features, such as a wide drive voltage range (2.5V to 30V), enable compatibility with virtually any controller IC in primary power supplies, facilitating replacement of existing silicon (Super Junction) MOSFETs. This makes it possible to simultaneously reduce component volume and power loss by approximately 99% and 55%, respectively, achieving higher efficiency in a smaller size.
According to Isaac Lin, General Manager, PSADC (Power Semiconductor Applications Development Center), Delta Electronics, Inc.: “GaN devices are attracting a great deal of attention in the industry as a ICs that greatly contribute to the miniaturization and energy saving of equipment. ROHM’s new products have realized high speed and safe gate drive by using their original analog technology. These products will further promote the use of GaN power devices, which is expected to grow.”
