Resonac Corporation and Soitec have signed an agreement to develop 200mm (8-inch) SmartSiC silicon carbide (SiC) wafers using Resonac substrates and epitaxy processes, in a major step for the deployment of Soitec’s high-yielding silicon carbide technology in Japan and other international markets.
SmartSiC silicon carbide is a disruptive compound semiconductor material providing superior performance and efficiency over silicon in high-growth power applications for electric mobility and industrial processes. It allows for more efficient power conversion, lighter and more compact designs and overall system cost savings – all key factors for success in automotive and industrial systems.
Christophe Maleville, Chief Technology Officer at Soitec, commented: “Silicon carbide is being adopted for EV and industrial applications, where it brings a significant system cost advantage. To further accelerate this adoption, silicon carbide yield and productivity must be improved. Associating Resonac premium quality SiC materials with Soitec’s unique 200mm (8-inch) SmartSiC technology will support volume availability of record quality epi-ready substrate. The combination of our respective technologies and products will optimize these substrates using Resonac’s high-quality epitaxy. Soitec is proud and excited to be partnering with Resonac to develop a best-in-class combined SiC product offering for Japan and the world.”
Makoto Takeda, General Manager of Device Solutions Business Unit at Resonac, commented: “We are delighted to announce this partnership with Soitec, which is fully aligned with our broader commitment to sustainable and energy-efficient semiconductor solutions. By combining Resonac’s high quality monocrystalline silicon carbide wafers with Soitec’s unique SmartSiC™ technology, we will deliver improved production efficiency of 200mm (8-inch) silicon carbide wafers and diversify the epi-wafer supply chain.”
Soitec’s SmartSiC silicon carbide wafers, or engineered substrates, are produced using the company’s proprietary SmartCut technology to bond an ultra-fine layer of high-quality mono SiC ‘donor’ wafer to a low-resistivity polycrystalline (poly-SiC) ‘handle’ wafer. The resulting engineered substrate delivers significantly improved device performance and manufacturing yields. By allowing multiple re-uses of the prime quality mono-SiC wafer, the process also reduces overall energy consumption during wafer manufacturing. Soitec has a new fabrication plant at its headquarters in Bernin, France, primarily dedicated to the production of SmartSiC wafers for electric vehicles, renewable energy and industrial equipment component applications.