StratEdge Corporation, leader in the design, production, and assembly of high-frequency and high-power semiconductor packages for RF, microwave, and millimeter-wave devices, announces its assembly services for attaching gallium nitride (GaN) and other high-frequency, high-power devices using gold-tin (AuSn) and gold-silicon (AuSi) onto copper-molybdenum-copper (CMC) tabs. StratEdge’s proprietary eutectic die attach method maximizes the power output a chip can achieve, optimizing its performance and providing an efficient way to dissipate heat to avoid overheating and failures during normal operation.
StratEdge uses the latest high-volume automated system in a cleanroom environment to perform eutectic AuSn die attach of compound semiconductor devices that have a backside gold surface finish. The bonder has micron placement accuracy. Solder preforms are matched to the size of the die to reduce solder bond line thickness to less than 6µm, maximizing power output for GaN devices, lowering junction temperatures, and increasing device reliability. For silicon devices, an AuSi eutectic die attach method is used to create a reliable solder joint with excellent thermal dissipation.
“GaN on CMC is perfect for chip-on-board (COB) applications,” said Tim Going, president for StratEdge Corporation. “Of course, we prefer to assemble our customers’ chips into StratEdge packages but we understand why some of our customers want to use boards made from organic materials. The problem with this is organic boards don’t do well when exposed to eutectic die attach temperatures. Eutectic die attach is a highly controlled die attach process that provides void-free, high-reliability, high-accuracy chip attachment. The chip’s performance benefits from the superior thermal characteristics of the CMC heat spreader. The chip is attached to the CMC tab before it’s installed onto the board. StratEdge provides the service along with the custom-built CMC tabs, which allows the chip to be placed directly on a copper layer or copper coin within the board.”
Read more in the paper “Eutectic Die Attach Optimizes High Power GaN Devices.” Learn how StratEdge’s post-fired ceramic package with a CMC base achieves a near void-free attachment that reduces junction temperatures.
StratEdge will be exhibiting at both the 2022 IMAPS Symposium being held in Boston, MA, Oct. 4-5, and IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) in Phoenix, AZ, Oct. 16-19.