SweGaN AB, a European semiconductor manufacturer that develops and produces engineered high-performance Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, announces it has entered strategic partnership with South Korea based RFHIC Corporation (KOSDAQ:218410). RFHIC is a global leader in designing and manufacturing GaN RF & microwave semiconductors for communications and defense applications. The new, pivotal agreement encompasses an undisclosed equity investment from RFHIC. The two companies will focus on joint R&D and product development moving forward.
Over the last decade, SweGaN has been developing and producing high-performance GaN-on-SiC epitaxial solutions for RF and power devices that can be used in various applications such 5G telecommunications infrastructure, defense radars, satellite communications, on-board chargers, and data center.
The new strategic investment by RFHIC manifests the recognition of SweGaN’s QuanFINE® epitaxial solutions as a standout differentiator among GaN-on-SiC materials available on the market. In partnership with RFHIC, SweGaN gains additional resources to expedite market penetration and to achieve its business goals.
RFHIC Corporation cites the partnership with SweGaN and investment strategy target strengthening RFHIC’s gallium nitride semiconductor supply chain and further fortifying its competitiveness of RF and microwave products within the compound semiconductor arena.
Jr-Tai Chen, CEO and Founder at SweGaN, “With the accelerating demand for high-performance semiconductor materials to power a multitude of applications and increase the efficiency in an energy-conscious world, the new equity investment will support SweGaN’s capacity expansion plan of its best-in-class GaN-on-SiC epitaxial wafers and tap joint product developments with RFHIC.
“We are very proud to partner with RFHIC, a leading RF GaN innovator who has the passion and commitment to amplify the world by providing top-efficiency and cutting-edge GaN solutions.” continues Chen.
As market requirements for high-power, highly efficient semiconductors are spurred by the rapid growth of a wide array of applications such as 5G communications, defense radars and data centers, SweGaN is moving swiftly to address the growing demand by expanding its in-house manufacturing capacity and R&D capability. The new strategic partnership with RFHIC has the potential to significantly invigorate SweGaN’s position in multiple geographical areas important for the company as it aims to lead a transition from legacy material solutions to its innovative GaN semiconductors.
Dr. Samuel Cho, CTO, and co-founder of RFHIC Corporation, “As RFHIC maps its future strategy for GaN semiconductors including accelerated market demand for products in 5G, 6G, satellite communication and more, SweGaN’s high-performance 6-inch GaN epiwafers for RF and power semiconductors – with exemplary high-power efficiency – provide a strong fit for our technological roadmap and diversification of gallium nitride epitaxial wafer suppliers.”
“SweGaN’s unique epitaxial wafer development and manufacturing technology is a key factor in the high performance of gallium nitride semiconductors that we can tap in developing new products in the 4GHz ultra-high frequency band increasingly sought after by the market, continues Dr. Cho.”
In the joint collaboration, SweGaN and RFHIC plan to address the increasing demand for GaN semiconductors and initiate new product developments for a variety of markets.
