NEO Semiconductor, a developer of innovative technologies for 3D NAND flash and DRAM memory, today announced a performance boosting Floating Body Cell Mechanism for 3D X-DRAM. Andy Hsu, Founder & CEO presented groundbreaking Technology CAD (TCAD) simulation results for NEO’s 3D X-DRAM during the 16th IEEE International Memory Workshop (IMW) 2024 in Seoul, Republic of Korea.
Neo Semiconductor reveals a unique performance boosting mechanism called Back-gate Channel-depth Modulation (BCM) for Floating Body Cell that can increase data retention by 40,000X and sensing window by 20X.
“Unlike the traditional 2D Floating Body Cell that uses body effect to change the cell current, our BCM mechanism employs a back-gate voltage to modulate the channel depth. This patented invention increases the sensing window and data retention significantly, that will result in faster and more reliable DRAM, and reduce the refresh frequency to save power,” said Andy Hsu, Founder & CEO of NEO Semiconductor. “We are proud to lead the DRAM industry into the 3D era while solving the capacity scaling bottleneck that the current 2D DRAM is experiencing”.
NEO Semiconductor’s 3D X-DRAM is a first-of-its-kind 3D NAND-like DRAM cell array structure based on floating body cell technology. It can be manufactured using today’s mature 3D NAND-like process. Based on Neo’s estimates, 3D X-DRAM technology can achieve 128 Gb density with 300 layers, which is 8 times today’s DRAM density. It can also reduce the chip’s footprint and power consumption.
